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Samsung M471B1G73BH0-YH9 8GB
Kingston XK2M26-MIE 16GB

Samsung M471B1G73BH0-YH9 8GB vs Kingston XK2M26-MIE 16GB

总分
star star star star star
Samsung M471B1G73BH0-YH9 8GB

Samsung M471B1G73BH0-YH9 8GB

总分
star star star star star
Kingston XK2M26-MIE 16GB

Kingston XK2M26-MIE 16GB

差异 规格 评论

差异

Samsung M471B1G73BH0-YH9 8GB 需要考虑的原因
Samsung M471B1G73BH0-YH9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 39
    左右 26% 更低的延时
Kingston XK2M26-MIE 16GB 需要考虑的原因
Kingston XK2M26-MIE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 9.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.4 left arrow 5.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73BH0-YH9 8GB
Kingston XK2M26-MIE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 39
  • 读取速度，GB/s
    9.5 left arrow 14.0
  • 写入速度，GB/s
    5.1 left arrow 6.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1646 left arrow 2297

Samsung M471B1G73BH0-YH9 8GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Kingston KHYXPX-MID 8GB

Kingston XK2M26-MIE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR64GX4M4C3000C15 16GB
Corsair CMR64GX4M4C3000C15 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramsta Ramsta-2400Mhz-8G 8GB
Ramsta Ramsta-2400Mhz-8G 8GB
内存RAM
AMD R934G2401U1S 4GB
AMD R934G2401U1S 4GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C19-8GSXK 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M386A8K40CM2-CRC 64GB
Samsung M386A8K40CM2-CRC 64GB
内存RAM