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Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB

Samsung M471B1G73DB0-YK0 8GB vs Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

差异 规格 评论

差异

Samsung M471B1G73DB0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 45
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    13.2 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 8.1
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 42
  • 读取速度，GB/s
    11.9 left arrow 13.2
  • 写入速度，GB/s
    8.1 left arrow 9.4
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2077 left arrow 2326

Samsung M471B1G73DB0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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