Samsung M471B1G73EB0-YK0 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的读取速度，GB/s

16.1 12.2

测试中的平均数值
更快的写入速度，GB/s

13.0 7.9

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

Samsung M471A1K43DB1-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

12.2 16.1
写入速度，GB/s

7.9 13.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2072 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B1G73EB0-YK0 8GB

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Samsung M471A1K43DB1-CWE 8GB

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Kingston 39P5429-006.AO01 2GB

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A-DATA Technology DDR3 1600 4GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Corsair CMK32GX4M2A2800C16 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMT16GX4M2C3000C15 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Kingston 9905701-032.A00G 16GB

Kingston 9905701-032.A00G 16GB

Kingston 99U5458-008.A00LF 4GB

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Kingston 9905678-029.A00G 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB