Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology CT16G4DFD8266.M16FD 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology CT16G4DFD8266.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 47

左右 -62% 更低的延时
更快的读取速度，GB/s

17.6 11.8

测试中的平均数值
更快的写入速度，GB/s

13.7 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 29
读取速度，GB/s

11.8 17.6
写入速度，GB/s

8.0 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2061 3432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-4000C15-8GTRS 8GB

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G Skill Intl F4-2666C15-4GRR 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Patriot Memory (PDP Systems) 3200 C16 Series 8GB

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G Skill Intl F3-1600C11-4GIS 4GB

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SK Hynix HMA82GS6AFRFR-UH 16GB

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AMD R5S38G1601U2S 8GB

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Crucial Technology BL16G32C16U4B.16FE 16GB

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Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston 9905471-006.A01LF 4GB

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Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB