Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3600C19-16GSXF 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-3600C19-16GSXF 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GSXF 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 45

左右 -105% 更低的延时
更快的读取速度，GB/s

18.8 12.3

测试中的平均数值
更快的写入速度，GB/s

13.5 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3600C19-16GSXF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 22
读取速度，GB/s

12.3 18.8
写入速度，GB/s

8.0 13.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kllisre M378A1K43BB2-CRC 8GB

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Kingston 9905598-006.A00G 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston KHX2666C15S4/8G 8GB

Kingston KHX2666C15S4/8G 8GB

AMD R538G1601U2S-UO 8GB

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Kingston KHX3200C18D4/4G 4GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMV8GX4M1A2666C18 8GB

Corsair CMV8GX4M1A2666C18 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Apacer Technology 78.C1GM3.C7W0B 8GB

Apacer Technology 78.C1GM3.C7W0B 8GB