RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
比较
Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12.3
8.8
测试中的平均数值
更快的写入速度,GB/s
8.0
5.6
测试中的平均数值
更高的内存带宽,mbps
12800
10600
左右 1.21% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
45
左右 -50% 更低的延时
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
45
30
读取速度,GB/s
12.3
8.8
写入速度,GB/s
8.0
5.6
内存带宽,mbps
12800
10600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1992
1344
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5428-063.A00LF 8GB
Netac Technology Co Ltd E40832A 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMSX64GX4M2A2666C18 32GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C14-8GVR 8GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-2400C16-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMK64GX4M4C3200C16 16GB
PNY Electronics PNY 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMK32GX4M4K4000C19 8GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMK32GX4M4A2400C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XRMWRN-MIE2 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3200C16-16GRS 16GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Samsung M4 70T2953EZ3-CE6 1GB
AMD R748G2133U2S 8GB
报告一个错误
×
Bug description
Source link