Samsung M471B5273CH0-CH9 4GB vs Cortus SAS 8ATF51264AZ-2G1A1 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 74

左右 35% 更低的延时

Cortus SAS 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Cortus SAS 8ATF51264AZ-2G1A1 4GB

报告一个错误

更快的读取速度，GB/s

13.9 8.9

测试中的平均数值
更快的写入速度，GB/s

7.9 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 74
读取速度，GB/s

8.9 13.9
写入速度，GB/s

5.9 7.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 1679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Swissbit MEU25664D6BC2EP-30 2GB

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Crucial Technology BL16G32C16U4B.M16FE 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Corsair CMR32GX4M2C3200C16 16GB

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Crucial Technology CT8G4DFS8213.M8FB 8GB

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Apacer Technology 78.BAGSR.4030B 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Micron Technology 16A6A2G64HZ-2-2E1 16GB

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Samsung M471A5244CB0-CWE 4GB

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Corsair CM4X8GF2666C16K8 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMD32GX4M2B3000C15 16GB

Corsair CMD32GX4M2B3000C15 16GB