Samsung M471B5273CH0-CH9 4GB vs Kingston KHX3000C16/16GX 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Kingston KHX3000C16/16GX 16GB

Kingston KHX3000C16/16GX 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Kingston KHX3000C16/16GX 16GB

需要考虑的原因
Kingston KHX3000C16/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 48

左右 -85% 更低的延时
更快的读取速度，GB/s

14.9 8.9

测试中的平均数值
更快的写入速度，GB/s

11.0 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Kingston KHX3000C16/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 26
读取速度，GB/s

8.9 14.9
写入速度，GB/s

5.9 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 3008

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston XRGM6C-MIE 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

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SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N

Corsair CMZ16GX3M2A1600C10 8GB

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Netac Technology Co Ltd EKBLACK4083016A 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Corsair CMK32GX4M4A2400C14 8GB

Corsair CMK32GX4M4A2400C14 8GB

Kingston KHX1600C9S3L/8G 8GB

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Crucial Technology CT16G4DFRA32A.C8FB 16GB