Samsung M471B5273CH0-CH9 4GB vs Neo Forza GKE160SO204808-3200 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 63

左右 24% 更低的延时

Neo Forza GKE160SO204808-3200 16GB

需要考虑的原因
Neo Forza GKE160SO204808-3200 16GB

报告一个错误

更快的读取速度，GB/s

14.7 8.9

测试中的平均数值
更快的写入速度，GB/s

12.7 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Neo Forza GKE160SO204808-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 63
读取速度，GB/s

8.9 14.7
写入速度，GB/s

5.9 12.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C19-32GVK 32GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology CT8G4SFD824A.C16FHP 8GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMWS8GL3200K16W4E 8GB

Corsair CMWS8GL3200K16W4E 8GB

Golden Empire CL11-11-11 D3-1600 4GB

Golden Empire CL11-11-11 D3-1600 4GB

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SK Hynix HMA851S6CJR6N-VK 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB