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Samsung M471B5273DH0-CK0 4GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Samsung M471B5273DH0-CK0 4GB vs Crucial Technology BL16G36C16U4RL.M8FB1 16GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
Crucial Technology BL16G36C16U4RL.M8FB1 16GB 需要考虑的原因
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 41
    左右 -58% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 26
  • 读取速度，GB/s
    13.3 left arrow 20.9
  • 写入速度，GB/s
    9.0 left arrow 18.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 4217

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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AMD R538G1601U2S-UO 8GB
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内存RAM
Samsung M471B5273DH0-CK0 4GB
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Crucial Technology BL16G36C16U4RL.M8FB1 16GB
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AMD R5S38G1601U2S 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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