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Samsung M471B5273DH0-CK0 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB

Samsung M471B5273DH0-CK0 4GB vs Teikon TMA81GS6AFR8N-UHSC 8GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.0 left arrow 8.5
    测试中的平均数值
Teikon TMA81GS6AFR8N-UHSC 8GB 需要考虑的原因
Teikon TMA81GS6AFR8N-UHSC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 41
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 13.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 37
  • 读取速度，GB/s
    13.3 left arrow 13.5
  • 写入速度，GB/s
    9.0 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 2026

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Teikon TMA81GS6AFR8N-UHSC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston MSI21D4S15HAG/8G 8GB
Kingston MSI21D4S15HAG/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
SK Hynix HMA82GU6DJR8N-XN 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Avant Technology J641GU42J7240ND 8GB
Avant Technology J641GU42J7240ND 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMW64GX4M4C3466C16 16GB
Corsair CMW64GX4M4C3466C16 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM