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Samsung M471B5273EB0-CK0 4GB
Samsung M474A2K43BB1-CRC 16GB

Samsung M471B5273EB0-CK0 4GB vs Samsung M474A2K43BB1-CRC 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Samsung M474A2K43BB1-CRC 16GB 需要考虑的原因
Samsung M474A2K43BB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 40
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Samsung M474A2K43BB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 34
  • 读取速度，GB/s
    12.3 left arrow 15.9
  • 写入速度，GB/s
    8.9 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 2927

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Samsung M474A2K43BB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Corsair CMN32GX4M2Z3200C16 16GB
Corsair CMN32GX4M2Z3200C16 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G26C16S4B.8FD 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingston 99U5723-002.A00G 8GB
Kingston 99U5723-002.A00G 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM