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Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
比较
Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT16G4SFD824A.M16FA 16GB
总分
Samsung M471B5673FH0-CF8 2GB
总分
Crucial Technology CT16G4SFD824A.M16FA 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FA 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
30
左右 -20% 更低的延时
更快的读取速度,GB/s
15.9
10.6
测试中的平均数值
更快的写入速度,GB/s
12.9
6.8
测试中的平均数值
更高的内存带宽,mbps
19200
8500
左右 2.26 更高的带宽
规格
完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
30
25
读取速度,GB/s
10.6
15.9
写入速度,GB/s
6.8
12.9
内存带宽,mbps
8500
19200
Other
描述
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1479
2907
Samsung M471B5673FH0-CF8 2GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Crucial Technology CT16G4SFD824A.M16FA 16GB RAM的比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
Corsair CMK32GX4M2Z3600C18 16GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-2133C15-16GIS 16GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMW16GX4M2Z3600C18 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMK32GX4M1D3000C16 32GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston XRGM6C-MIE 16GB
G Skill Intl F5-5600J4040C16G 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMN32GX4M2Z3600C18 16GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Crucial Technology CT16G4SFS832A.M8FB 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston M378A1K43CB2-CRC 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston KVR800D2N6/2G 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C16-16GRS 16GB
报告一个错误
×
Bug description
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