RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Crucial Technology BL8G36C16U4WL.M8FE1 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
31
左右 29% 更低的延时
需要考虑的原因
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
报告一个错误
更快的读取速度,GB/s
19.1
17.7
测试中的平均数值
更快的写入速度,GB/s
15.6
12.7
测试中的平均数值
规格
完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
22
31
读取速度,GB/s
17.7
19.1
写入速度,GB/s
12.7
15.6
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3075
3553
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M471A1K43CB1-CRCR 8GB
Kingston 9905471-001.A01LF 2GB
Avant Technology J644GU44J1293NF 32GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 16G2666CL19 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965669-008.A03G 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD64GX4M4B3466C16 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Kingston K531R8-MIN 4GB
Kingston 99U5702-095.A00G 8GB
A-DATA Technology DDR2 800G 2GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston CBD24D4S7S8MB-8 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C18-16GRS 16GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Transcend Information TS1GSH64V4B 8GB
报告一个错误
×
Bug description
Source link