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SK Hynix DDR2 800 2G 2GB
Essencore Limited IM48GU48N21-FFFHM 8GB

SK Hynix DDR2 800 2G 2GB vs Essencore Limited IM48GU48N21-FFFHM 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Essencore Limited IM48GU48N21-FFFHM 8GB

Essencore Limited IM48GU48N21-FFFHM 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 12.9
    测试中的平均数值
Essencore Limited IM48GU48N21-FFFHM 8GB 需要考虑的原因
Essencore Limited IM48GU48N21-FFFHM 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 77
    左右 -148% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Essencore Limited IM48GU48N21-FFFHM 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 31
  • 读取速度，GB/s
    2,936.9 left arrow 12.9
  • 写入速度，GB/s
    1,884.0 left arrow 9.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2190

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Essencore Limited IM48GU48N21-FFFHM 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX2400C15D4/16GX 16GB
Kingston KHX2400C15D4/16GX 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA84GR7MFR4N-UH 32GB
SK Hynix HMA84GR7MFR4N-UH 32GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Samsung M378A2G43MX3-CTD 16GB
Samsung M378A2G43MX3-CTD 16GB
内存RAM
A-DATA Technology AD63I1C1624EV 4GB
A-DATA Technology AD63I1C1624EV 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905702-014.A00G 8GB
Kingston 9905702-014.A00G 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2666C15-8GRR 8GB
G Skill Intl F4-2666C15-8GRR 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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G Skill Intl F4-3333C16-16GTZ 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMU64GX4M4C3000C15 16GB
Corsair CMU64GX4M4C3000C15 16GB
内存RAM