RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB

SK Hynix HMA451U6AFR8N-TF 4GB vs G Skill Intl F4-2400C15-8GTZRX 8GB

总分
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分
star star star star star
G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

差异 规格 评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
G Skill Intl F4-2400C15-8GTZRX 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GTZRX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 37
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 10.6
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 22
  • 读取速度，GB/s
    14.7 left arrow 17.4
  • 写入速度，GB/s
    10.6 left arrow 12.7
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2438 left arrow 3135

SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C15-8GTZRX 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-2133C15-4GNT 4GB
G Skill Intl F4-2133C15-4GNT 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Kingston 9905712-034.A00G 16GB
Kingston 9905712-034.A00G 16GB
内存RAM