SK Hynix HMA82GS6CJR8N-VK 16GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 66

左右 45% 更低的延时
更快的读取速度，GB/s

15 14.7

测试中的平均数值
更快的写入速度，GB/s

10.1 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

报告一个错误

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 66
读取速度，GB/s

15.0 14.7
写入速度，GB/s

10.1 7.3
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2657 1699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G43TB1-CTD 8GB

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Crucial Technology CT8G4DFS8266.M8FJ 8GB

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Ramaxel Technology RMSA3320KE78HAF-3200 8GB

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G Skill Intl F4-3600C14-8GTRSB 8GB

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AMD AE34G1601U1 4GB

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A-DATA Technology AD73I1B1672EG 2GB

Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMW64GX4M4C3000C15 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB