SK Hynix HMT325S6BFR8C-H9 2GB vs Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

17.8 11.6

测试中的平均数值
更快的写入速度，GB/s

14.1 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

11.6 17.8
写入速度，GB/s

7.3 14.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 3434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Kingston 9965643-006.A01G 8GB

Kingston 9965643-006.A01G 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 99U5713-002.A00G 4GB

Kingston 99U5713-002.A00G 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB