SK Hynix HMT325S6CFR8C-H9 2GB vs G Skill Intl F4-3600C14-8GTZN 8GB

总分

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB

报告一个错误

G Skill Intl F4-3600C14-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

19.1 10.7

测试中的平均数值
更快的写入速度，GB/s

13.7 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-3600C14-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

10.7 19.1
写入速度，GB/s

6.8 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1314 3091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFD8213.M16FB 8GB

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Samsung M4 70T5663QZ3-CF7 2GB

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Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Kingston 99U5584-004.A00LF 4GB

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G Skill Intl F4-3200C14-8GTRS 8GB

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Corsair CMD16GX4M4C3200C15 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Mushkin 99[2/7/4]189F 4GB

Mushkin 99[2/7/4]189F 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB