SK Hynix HMT325S6CFR8C-PB 2GB vs Crucial Technology CT4G4SFS8213.C8FBR2 4GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 -23% 更低的延时
更快的读取速度，GB/s

12.9 10.9

测试中的平均数值
更快的写入速度，GB/s

11.4 6.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Crucial Technology CT4G4SFS8213.C8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 31
读取速度，GB/s

10.9 12.9
写入速度，GB/s

6.6 11.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1406 2136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.BAGM6.40C0B 4GB

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G Skill Intl F5-5600J4040C16G 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

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EXCELERAM EKBLACK4163016AD 8GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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AMD AE34G1601U1 4GB

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Kingston 9905403-444.A00LF 4GB

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Kingston 99U5469-045.A00LF 4GB

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Samsung V-GeN D4S4GL30A16TS5 4GB

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Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

JUHOR JHD3000U1908JG 8GB

JUHOR JHD3000U1908JG 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB