SK Hynix HMT325S6CFR8C-PB 2GB vs G Skill Intl F4-4000C19-16GTZR 16GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

G Skill Intl F4-4000C19-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 -46% 更低的延时
更快的读取速度，GB/s

18.8 10.9

测试中的平均数值
更快的写入速度，GB/s

17.9 6.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

G Skill Intl F4-4000C19-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 26
读取速度，GB/s

10.9 18.8
写入速度，GB/s

6.6 17.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1406 4053

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 2GB-DDR2 800Mhz 2GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT8G4DFS824A.C8FE 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston KF3200C20S4/16GX 16GB

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A-DATA Technology DDR3 1333G 2GB

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Kingston 99U5700-032.A00G 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB