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SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix HMT325U6CFR8C-PB 2GB vs SK Hynix V-GeN D4H8GL26A8TX5 8GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
SK Hynix V-GeN D4H8GL26A8TX5 8GB 需要考虑的原因
SK Hynix V-GeN D4H8GL26A8TX5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 43
    左右 -105% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 21
  • 读取速度，GB/s
    12.3 left arrow 17.7
  • 写入速度，GB/s
    8.1 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 3042

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMSO8GX4M1A2133C15 8GB
Corsair CMSO8GX4M1A2133C15 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMR16GX4M2Z2933C16 8GB
Corsair CMR16GX4M2Z2933C16 8GB
内存RAM
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9965657-011.A00G 16GB
Kingston 9965657-011.A00G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5143EB1-CRC 4GB
Samsung M471A5143EB1-CRC 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Corsair CM4X8GF2400C14K4 8GB
Corsair CM4X8GF2400C14K4 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM