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SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16HTS51264HY-800A1 4GB

SK Hynix HMT351S6CFR8C-PB 4GB vs Micron Technology 16HTS51264HY-800A1 4GB

总分
star star star star star
SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

总分
star star star star star
Micron Technology 16HTS51264HY-800A1 4GB

Micron Technology 16HTS51264HY-800A1 4GB

差异 规格 评论

差异

SK Hynix HMT351S6CFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT351S6CFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 65
    左右 29% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 1,728.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 6400
    左右 2% 更高的带宽
Micron Technology 16HTS51264HY-800A1 4GB 需要考虑的原因
Micron Technology 16HTS51264HY-800A1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.6
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16HTS51264HY-800A1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR2
  • PassMark中的延时，ns
    46 left arrow 65
  • 读取速度，GB/s
    11.6 left arrow 4,268.2
  • 写入速度，GB/s
    8.0 left arrow 1,728.8
  • 内存带宽，mbps
    12800 left arrow 6400
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 728

SK Hynix HMT351S6CFR8C-PB 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
G Skill Intl F4-2133C15-8GVR 8GB

Micron Technology 16HTS51264HY-800A1 4GB RAM的比较

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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