SK Hynix HMT351U6CFR8C-H9 4GB vs Samsung M378A1G43EB1-CPB 8GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

Samsung M378A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

15.4 13.7

测试中的平均数值
更快的写入速度，GB/s

11.5 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

Samsung M378A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

13.7 15.4
写入速度，GB/s

8.3 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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A-DATA Technology AD73I1C1674EV 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston XRGM6C-MIE 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Team Group Inc. Team-Elite-1333 4GB

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Kingston KHX3000C16D4/16GX 16GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

EVGA 8GX-D4-2800-MR 8GB

EVGA 8GX-D4-2800-MR 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB