SK Hynix HMT41GS6BFR8A-PB 8GB vs Patriot Memory (PDP Systems) PSD416G24002S 16GB

总分

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

总分

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

差异规格评论

差异

SK Hynix HMT41GS6BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6BFR8A-PB 8GB

报告一个错误

Patriot Memory (PDP Systems) PSD416G24002S 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G24002S 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 -59% 更低的延时
更快的读取速度，GB/s

13.7 12.1

测试中的平均数值
更快的写入速度，GB/s

10.6 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6BFR8A-PB 8GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 29
读取速度，GB/s

12.1 13.7
写入速度，GB/s

8.0 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2088 2422

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX32GX4M2A3200C22 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M471B5773DH0-CK0 2GB

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Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

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