SK Hynix HMT451S6BFR8A-PB 4GB vs Corsair CMSX16GX4M2A3200C22 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

Corsair CMSX16GX4M2A3200C22 8GB

需要考虑的原因
Corsair CMSX16GX4M2A3200C22 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 44

左右 -10% 更低的延时
更快的读取速度，GB/s

16.8 12.3

测试中的平均数值
更快的写入速度，GB/s

14.0 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMSX16GX4M2A3200C22 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 40
读取速度，GB/s

12.3 16.8
写入速度，GB/s

7.8 14.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1977 3015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6CFR8C-PB 2GB

Samsung M471A2K43DB1-CTD 16GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

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Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB