SK Hynix HYMP112U64CP8-S5 1GB vs Crucial Technology CT16G4DFD8213.C16FH1 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 14.8

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FH1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FH1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 66

左右 -106% 更低的延时
更快的写入速度，GB/s

8.2 2,978.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 32
读取速度，GB/s

2,929.1 14.8
写入速度，GB/s

2,978.2 8.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 2533

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-8GRBB 8GB

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Corsair CMWX8GD3200C16W2E 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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EXCELERAM D48G8G8H8SS9CJRB22 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMK16GX4M2D3600C16 8GB

Corsair CMK16GX4M2D3600C16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905469-153.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N