SK Hynix HYMP125U64CP8-S6 2GB vs Mushkin MR[A/B]280HHHH16G 16GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 18.4

测试中的平均数值
更快的写入速度，GB/s

2,381.6 14.4

测试中的平均数值

Mushkin MR[A/B]280HHHH16G 16GB

需要考虑的原因
Mushkin MR[A/B]280HHHH16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 60

左右 -173% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

Mushkin MR[A/B]280HHHH16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 22
读取速度，GB/s

5,082.2 18.4
写入速度，GB/s

2,381.6 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

925 3394

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C14/16G 16GB

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Corsair CMK16GX4M2B3200C16 8GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB