SK Hynix HYMP164U64CP6-Y5 512MB vs Kingston KP6FH5-MIE 32GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Kingston KP6FH5-MIE 32GB

Kingston KP6FH5-MIE 32GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

低于PassMark测试中的延时，ns

44 58

左右 24% 更低的延时
更快的写入速度，GB/s

8,883.4 12.8

测试中的平均数值

Kingston KP6FH5-MIE 32GB

需要考虑的原因
Kingston KP6FH5-MIE 32GB

报告一个错误

更快的读取速度，GB/s

16.4 14

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston KP6FH5-MIE 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 58
读取速度，GB/s

14,740.4 16.4
写入速度，GB/s

8,883.4 12.8
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2811 2658

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

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Kingston 9905403-134.A00LF 2GB

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SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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TwinMOS 8DPT5MK8-TATP 2GB

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SK Hynix HMA82GS6AFR8N-UH 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston KF3200C18D4/8G 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Micron Technology 16ATF1G64AZ-2G3A2 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB