Smart Modular SF564128CJ8N6NNSEG 4GB vs Patriot Memory (PDP Systems) 3600 C20 Series 8GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更快的读取速度，GB/s

20.1 12.3

测试中的平均数值
更快的写入速度，GB/s

16.3 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

12.3 20.1
写入速度，GB/s

7.3 16.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1570 3796

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

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G Skill Intl F4-4000C18-8GVK 8GB