STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CMK64GX4M8A2666C16 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CMK64GX4M8A2666C16 8GB

Corsair CMK64GX4M8A2666C16 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.2

测试中的平均数值

Corsair CMK64GX4M8A2666C16 8GB

需要考虑的原因
Corsair CMK64GX4M8A2666C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 63

左右 -125% 更低的延时
更快的写入速度，GB/s

10.1 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK64GX4M8A2666C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 28
读取速度，GB/s

3,231.0 13.2
写入速度，GB/s

1,447.3 10.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2820

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-3600C16-16GTZN 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

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G Skill Intl F4-3200C18-8GRS 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Kingston MSI24D4D4S8MB-8 8GB

Kingston MSI24D4D4S8MB-8 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Apacer Technology GD2.111881.002 4GB

Apacer Technology GD2.111881.002 4GB