STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Golden Empire CL15-15-15 D4-2666 4GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.4

测试中的平均数值

Golden Empire CL15-15-15 D4-2666 4GB

需要考虑的原因
Golden Empire CL15-15-15 D4-2666 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 63

左右 -142% 更低的延时
更快的写入速度，GB/s

11.0 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Golden Empire CL15-15-15 D4-2666 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 26
读取速度，GB/s

3,231.0 13.4
写入速度，GB/s

1,447.3 11.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-004.A00LF 4GB

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G Skill Intl F4-3600C18-8GVK 8GB

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Transcend Information TS512MSH64V1H 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Kingston 9905700-025.A00G 8GB

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Kingston 99U5624-001.A00G 8GB

Kingston 99U5624-001.A00G 8GB

Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-3200C16-4GVRB 4GB