takeMS International AG TMS2GB264D082-805G 2GB vs Kingston 9905678-139.A00G 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 13.2

测试中的平均数值

Kingston 9905678-139.A00G 8GB

需要考虑的原因
Kingston 9905678-139.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 46

左右 -70% 更低的延时
更快的写入速度，GB/s

8.2 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9905678-139.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 27
读取速度，GB/s

5,535.6 13.2
写入速度，GB/s

1,852.4 8.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS8266.C8FD1 8GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston HP24D4R7D4MAM-32 32GB

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Corsair CM2X1024-8500C5D 1GB

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Apacer Technology 78.C2GF6.AU20B 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMW32GX4M4A2666C16 8GB

Corsair CMW32GX4M4A2666C16 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMWX8GD3000C15W4 8GB

Corsair CMWX8GD3000C15W4 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB