takeMS International AG TMS2GB264D082-805G 2GB vs Kingston KHX2800C14D4/4GX 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 16.8

测试中的平均数值

Kingston KHX2800C14D4/4GX 4GB

需要考虑的原因
Kingston KHX2800C14D4/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

13.2 1,852.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingston KHX2800C14D4/4GX 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

5,535.6 16.8
写入速度，GB/s

1,852.4 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 8 13 18 23 29 34 35 36 37 38
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 2996

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston KHX2800C14D4/4GX 4GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Corsair CMU64GX4M4A2666C16 16GB

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Avexir Technologies Corporation T-20181206 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston 9905630-005.A00G 8GB