takeMS International AG TMS2GB264D083805EV 2GB vs Corsair CMD32GX4M4A2666C15 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Corsair CMD32GX4M4A2666C15 8GB

Corsair CMD32GX4M4A2666C15 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值

Corsair CMD32GX4M4A2666C15 8GB

需要考虑的原因
Corsair CMD32GX4M4A2666C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 50

左右 -43% 更低的延时
更快的写入速度，GB/s

12.4 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMD32GX4M4A2666C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 35
读取速度，GB/s

3,757.3 15.8
写入速度，GB/s

1,457.4 12.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 3164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16S4B.M8FE1 8GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Samsung M393A1G40DB0-CPB 8GB

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G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB