takeMS International AG TMS2GB264D083805EV 2GB vs Corsair CMR16GX4M2C3000C16 8GB

总分

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

总分

Corsair CMR16GX4M2C3000C16 8GB

Corsair CMR16GX4M2C3000C16 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D083805EV 2GB

需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值

Corsair CMR16GX4M2C3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2C3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 50

左右 -72% 更低的延时
更快的写入速度，GB/s

13.9 1,457.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMR16GX4M2C3000C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 29
读取速度，GB/s

3,757.3 18.0
写入速度，GB/s

1,457.4 13.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

557 3371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6BFR8C-H9 2GB

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Samsung M471A5244CB0-CWE 4GB

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Samsung M378A1G43DB0-CPB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB