TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CMSX32GX4M2A2933C19 16GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值
更快的写入速度，GB/s

870.4 15.1

测试中的平均数值

Corsair CMSX32GX4M2A2933C19 16GB

需要考虑的原因
Corsair CMSX32GX4M2A2933C19 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 87

左右 -190% 更低的延时
更高的内存带宽，mbps

23400 5300

左右 4.42 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMSX32GX4M2A2933C19 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 30
读取速度，GB/s

3,155.6 17.2
写入速度，GB/s

870.4 15.1
内存带宽，mbps

5300 23400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

417 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Kingston 99U5624-003.A00G 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston ACR26D4U9S8HJ-8 8GB

Kingston ACR26D4U9S8HJ-8 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471A1K1KCB1-CRC 8GB

Samsung M471A1K1KCB1-CRC 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB