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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C15-8GTRG 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-4000C15-8GTRG 8GB

总分
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分
star star star star star
G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

差异 规格 评论

差异

TwinMOS 8DHE3MN8-HATP 2GB 需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 21.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    870.4 left arrow 19.4
    测试中的平均数值
G Skill Intl F4-4000C15-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-4000C15-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 87
    左右 -263% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C15-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    87 left arrow 24
  • 读取速度，GB/s
    3,155.6 left arrow 21.6
  • 写入速度，GB/s
    870.4 left arrow 19.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    417 left arrow 4250

TwinMOS 8DHE3MN8-HATP 2GB RAM的比较

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

G Skill Intl F4-4000C15-8GTRG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C15-8GTRG 8GB
G Skill Intl F4-4000C15-8GTRG 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD8GX4M2B3000C15 4GB
Corsair CMD8GX4M2B3000C15 4GB
内存RAM
Mushkin 994083 4GB
Mushkin 994083 4GB
G Skill Intl F4-2400C17-4GFT 4GB
G Skill Intl F4-2400C17-4GFT 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3000C15-4GRR 4GB
G Skill Intl F4-3000C15-4GRR 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston ACR26D4S9D8ME-16 16GB
Kingston ACR26D4S9D8ME-16 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston Kingston DDR2800Mh 2GB
Kingston Kingston DDR2800Mh 2GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Apacer Technology GD2.1831WS.002 16GB
Apacer Technology GD2.1831WS.002 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C16-8GSX 8GB
G Skill Intl F4-3200C16-8GSX 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM