TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BL8G26C16U4R.8FD 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Crucial Technology BL8G26C16U4R.8FD 8GB

需要考虑的原因
Crucial Technology BL8G26C16U4R.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 53

左右 -83% 更低的延时
更快的写入速度，GB/s

13.3 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BL8G26C16U4R.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 29
读取速度，GB/s

3,726.4 15.7
写入速度，GB/s

1,590.1 13.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 3159

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Kingston KF3600C16D4/16GX 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston 99U5471-012.A00LF 4GB

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Panram International Corporation M424051 4GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMK8GX4M1D3000C16 8GB

Corsair CMK8GX4M1D3000C16 8GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB