RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology CT4G4DFS824A.M8FF 4GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Crucial Technology CT4G4DFS824A.M8FF 4GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
15.8
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FF 4GB
报告一个错误
低于PassMark测试中的延时,ns
44
96
左右 -118% 更低的延时
更快的写入速度,GB/s
10.5
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
44
读取速度,GB/s
2,725.2
15.8
写入速度,GB/s
1,336.0
10.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
2803
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Crucial Technology CT4G4DFS824A.M8FF 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT42GR7AFR4A-PB 16GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905598-039.A00G 16GB
A-DATA Technology AD73I1B1672EG 2GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Team Group Inc. UD5-6400 16GB
Corsair CM4S16GL3200K18K2 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Samsung M4 70T5663QZ3-CE6 2GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A1K43EB1-CWE 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9965640-006.A01G 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C19-8GSXW 8GB
Samsung M393B5170EH1-CH9 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
Kingston 99U5428-018.A00LF 8GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
报告一个错误
×
Bug description
Source link