Unifosa Corporation GU502203EP0201 1GB vs Corsair CMW16GX4M2Z3600C18 8GB

总分

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

总分

Corsair CMW16GX4M2Z3600C18 8GB

Corsair CMW16GX4M2Z3600C18 8GB

差异规格评论

差异

Unifosa Corporation GU502203EP0201 1GB

需要考虑的原因
Unifosa Corporation GU502203EP0201 1GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

Corsair CMW16GX4M2Z3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2Z3600C18 8GB

报告一个错误

更快的读取速度，GB/s

18.2 12.6

测试中的平均数值
更快的写入速度，GB/s

15.4 7.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU502203EP0201 1GB

Corsair CMW16GX4M2Z3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

12.6 18.2
写入速度，GB/s

7.7 15.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1381 3559

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-8GTZKY 8GB

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AMD R5316G1609U2K 8GB

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G Skill Intl F4-2133C15-16GFX 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2G40EB1-CPB 16GB

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Kingston 99U5471-037.A00LF 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB