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Wilk Elektronik S.A. GY1600D364L9/4G 4GB
Crucial Technology CT51264BA160BJ.C8 4GB
比较
Wilk Elektronik S.A. GY1600D364L9/4G 4GB vs Crucial Technology CT51264BA160BJ.C8 4GB
总分
Wilk Elektronik S.A. GY1600D364L9/4G 4GB
总分
Crucial Technology CT51264BA160BJ.C8 4GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1600D364L9/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
33
40
左右 18% 更低的延时
更快的读取速度,GB/s
15.3
13.4
测试中的平均数值
更快的写入速度,GB/s
9.5
7.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT51264BA160BJ.C8 4GB
报告一个错误
更高的内存带宽,mbps
12800
10600
左右 1.21 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1600D364L9/4G 4GB
Crucial Technology CT51264BA160BJ.C8 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
33
40
读取速度,GB/s
15.3
13.4
写入速度,GB/s
9.5
7.7
内存带宽,mbps
10600
12800
Other
描述
PC3-10600, 1.5V, CAS Supported: 7 8 9
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2603
2185
Wilk Elektronik S.A. GY1600D364L9/4G 4GB RAM的比较
Crucial Technology BLS4G4D240FSB.8FAR 4GB
Crucial Technology CT51264BA160BJ.C8 4GB RAM的比较
Micron Technology 8JTF51264AZ-1G6E1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Wilk Elektronik S.A. GY1600D364L9/4G 4GB
Crucial Technology CT51264BA160BJ.C8 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-4800C18-8GTRG 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK8GX4M2B3600C18 4GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3466C16-8GVR 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4000C17-8GTZR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M378A4G43AB2-CWE 32GB
Crucial Technology CT51264BA1339.D16F 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M471B5173DB0-YK0 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
报告一个错误
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Bug description
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