RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
961
RAM
Kingston TYG410-QAC 2GB
Latency
55
Read speed
4,708.8
Write speed
2,307.4
№
962
RAM
Apacer Technology 78.A1GA0.AF4 2GB
Latency
55
Read speed
4,534.7
Write speed
2,444.7
№
963
RAM
Micron Technology L54-12/2009 BITWAY 2GB
Latency
55
Read speed
4,080.3
Write speed
1,733.0
№
964
RAM
Kreton Corporation 51621xxxx68x35xxxx 2GB
Latency
55
Read speed
4,801.5
Write speed
1,810.5
№
965
RAM
Mushkin 991529 (996529) 1GB
Latency
55
Read speed
3,969.1
Write speed
1,670.5
№
966
RAM
Elpida EBE10EE8ACWA-8G-E 1GB
Latency
55
Read speed
4,543.1
Write speed
2,191.7
№
967
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512R72P4-E3 1GB
Latency
55
Read speed
3,189.0
Write speed
1,608.0
№
968
RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Latency
55
Read speed
4,098.0
Write speed
1,622.4
№
969
RAM
Elpida EBE11ED8AGWA-6E-E 1GB
Latency
55
Read speed
4,435.4
Write speed
1,805.4
№
970
RAM
OCZ OCZ2SOE6671G 1GB
Latency
55
Read speed
3,330.1
Write speed
1,729.4
№
971
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64BP8-Y5 1GB
Latency
55
Read speed
3,944.5
Write speed
1,686.2
№
972
RAM
Mushkin 991589 (996589) 2GB
Latency
55
Read speed
4,280.9
Write speed
2,095.6
№
973
RAM
Elpida EBE11UD8AESA-5A-E 1GB
Latency
55
Read speed
3,168.3
Write speed
924.2
№
974
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-S5 1GB
Latency
55
Read speed
4,421.7
Write speed
1,791.6
№
975
RAM
Mushkin 991619 (996619) 2GB
Latency
55
Read speed
5,014.2
Write speed
2,759.5
№
976
RAM
TwinMOS 8DQT5KK5-TATP 1GB
Latency
55
Read speed
3,933.6
Write speed
1,557.2
№
977
RAM
Elpida EBE11UD8AJUA-6E-E 1GB
Latency
55
Read speed
3,812.0
Write speed
1,764.5
№
978
RAM
Samsung M3 78T2863DZS-CF7 1GB
Latency
55
Read speed
4,360.3
Write speed
1,772.8
№
979
RAM
Kreton Corporation 536245223681350800 2GB
Latency
55
Read speed
3,840.0
Write speed
1,534.8
№
980
RAM
Samsung M3 78T2863RZS-CE6 1GB
Latency
55
Read speed
4,048.5
Write speed
1,720.8
«
46
47
48
49
50
51
»
最新比较
Samsung M378B5173BH0-CH9 4GB
Gloway International (HK) STK4U2133D15081C 8GB
Samsung M378B5673FH0-CH9 2GB
Avant Technology W642GU42J5213N8 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA82GR8AMR4N-TF 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-3200C14-16GTZKW 16GB
Kingston KVR16N11/8-SP 8GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Kingston 99U5584-007.A00LF 4GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Samsung M471A5143SB1-CRC 4GB
Kllisre M378A1K43BB2-CRC 8GB
Apacer Technology 78.01G86.9H50C 1GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 9965640-035.C00G 32GB
Samsung M378B5673EH1-CF8 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905624-010.A00G 4GB
AMD R5S38G1601U2S 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
