RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
981
RAM
SK Hynix HYMP525A72CP4D3-Y5 2GB
Latency
55
Read speed
3,478.3
Write speed
2,021.2
№
982
RAM
MDT Technologies GmbH MDT 1GB DDR2-80 1GB
Latency
55
Read speed
4,503.5
Write speed
2,303.2
№
983
RAM
Elpida EBE21RD4ABHA-4A-E 2GB
Latency
55
Read speed
3,509.0
Write speed
1,441.0
№
984
RAM
Elpida EBE21RD4AEFA-4A-E 2GB
Latency
55
Read speed
3,461.3
Write speed
1,255.2
№
985
RAM
A Force Manufacturing Ltd. 256X64M-80E 2GB
Latency
55
Read speed
4,152.9
Write speed
1,710.2
№
986
RAM
Catalyst 02GN66KFUA8 2GB
Latency
55
Read speed
3,896.5
Write speed
1,578.8
№
987
RAM
Samsung M3 78T5663DZ3-CE6 2GB
Latency
55
Read speed
4,102.0
Write speed
1,850.1
№
988
RAM
Elpida EBE51RD8AGFA-4A-E 512MB
Latency
55
Read speed
2,806.1
Write speed
1,280.6
№
989
RAM
Smart Modular SG564283FG8NWKF-Z1 1GB
Latency
55
Read speed
4,036.5
Write speed
1,831.4
№
990
RAM
Flasys CL4-4-4DDR2-533 512MB
Latency
56
Read speed
2,876.8
Write speed
925.4
№
991
RAM
A-DATA Technology DOVE1B163B2 2GB
Latency
56
Read speed
3,821.4
Write speed
1,661.9
№
992
RAM
Hynix Semiconductor (Hyundai Electronics) ZION 667-2GB-V011- 2GB
Latency
56
Read speed
4,018.8
Write speed
1,469.6
№
993
RAM
A-DATA Technology DOVF1B163G2G 2GB
Latency
56
Read speed
4,315.2
Write speed
1,925.7
№
994
RAM
Samsung M3 78T6553CZ3-CD5 512MB
Latency
56
Read speed
3,161.0
Write speed
1,501.2
№
995
RAM
Kingston 9905316-017.A00LF 2GB
Latency
56
Read speed
3,875.6
Write speed
1,414.5
№
996
RAM
Patriot Memory (PDP Systems) Serdia 1GB
Latency
56
Read speed
3,409.9
Write speed
1,224.1
№
997
RAM
Kingston 9905316-106.A02LF 1GB
Latency
56
Read speed
4,878.3
Write speed
2,475.5
№
998
RAM
G Skill Intl F2-6400CL5-2GBSK 2GB
Latency
56
Read speed
4,166.0
Write speed
1,714.9
№
999
RAM
G Skill Intl F2-6400CL5-4GBPQ 4GB
Latency
56
Read speed
4,167.5
Write speed
2,395.8
№
1000
RAM
Infineon (Siemens) 72T128420HFN3.7A 1GB
Latency
56
Read speed
2,913.8
Write speed
1,788.2
«
47
48
49
50
51
52
»
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2666C16-8GRB 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Avant Technology J642GU44J2320ND 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT32GX4M2K4000C19 16GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK64GX4M2Z4000C18 32GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2400C17-8GISM 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3200C16-16GTZKW 16GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology DDR4 2666 8GB
AMD R5316G1609U2K 8GB
Shenzen Recadata Storage Technology 8GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Kingston HP698651-154-MCN 8GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
