RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块,按延迟增加排序
№
带宽
延迟, ns
读取速度,GB/s
写入速度,GB/s
№
1641
RAM
Micron Technology 9HTF12872AY-667E1 1GB
Latency
65
Read speed
3,319.2
Write speed
1,603.7
№
1642
RAM
Infineon (Siemens) 72T256220HR5A 2GB
Latency
65
Read speed
2,869.3
Write speed
1,398.6
№
1643
RAM
Swissbit MEN02G64D2BE2MT-25 2GB
Latency
65
Read speed
3,082.1
Write speed
1,604.9
№
1644
RAM
ProMos/Mosel Vitelic V916765G24QBFW-F5 1GB
Latency
65
Read speed
3,114.8
Write speed
1,328.4
№
1645
RAM
Samsung M4 70T2864QZ3-CE6 1GB
Latency
65
Read speed
3,858.9
Write speed
1,574.4
№
1646
RAM
Kingmax Semiconductor KLCD48F-A8ME5 1GB
Latency
65
Read speed
3,334.4
Write speed
1,228.0
№
1647
RAM
Protocol Engines MLLSE 667 2GB 2GB
Latency
65
Read speed
3,218.1
Write speed
1,381.2
№
1648
RAM
AENEON AET760UD00-30DB97S 1GB
Latency
65
Read speed
2,985.8
Write speed
1,236.5
№
1649
RAM
Crucial Technology CT12864AA667.M8FJ1 1GB
Latency
65
Read speed
2,632.0
Write speed
1,666.3
№
1650
RAM
Crucial Technology CT12864AA667.M8VFH 1GB
Latency
65
Read speed
3,041.3
Write speed
1,645.3
№
1651
RAM
Micron Technology 16HTF25664HY-800J2 2GB
Latency
65
Read speed
4,448.8
Write speed
2,042.3
№
1652
RAM
takeMS International AG TMS1GB264D082805AP 1GB
Latency
65
Read speed
2,544.7
Write speed
1,568.6
№
1653
RAM
AENEON AET860UD00-30DA08X 2GB
Latency
65
Read speed
3,474.4
Write speed
2,404.5
№
1654
RAM
Crucial Technology CT12864AC667.K8F8 1GB
Latency
65
Read speed
2,664.8
Write speed
1,132.2
№
1655
RAM
Qimonda 64T128020HU25FB 1GB
Latency
65
Read speed
2,678.6
Write speed
1,990.1
№
1656
RAM
Micron Technology 16HTS25664HY-667E1 2GB
Latency
65
Read speed
2,863.6
Write speed
1,439.0
№
1657
RAM
Micron Technology 16HTS51264HY-800A1 4GB
Latency
65
Read speed
4,268.2
Write speed
1,728.8
№
1658
RAM
takeMS International AG TMS2GB264D081805KW 2GB
Latency
65
Read speed
4,355.1
Write speed
3,142.1
№
1659
RAM
Micron Technology 18HF25672FD80EE1D4 1GB
Latency
65
Read speed
3,264.9
Write speed
2,477.9
№
1660
RAM
Kingston KHX6400S2LL/1G 1GB
Latency
65
Read speed
2,228.0
Write speed
1,337.2
«
80
81
82
83
84
85
»
最新比较
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Kingston 99U5429-007.A00LF 2GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Essencore Limited IM48GU88N21-FFFHM 8GB
Samsung M471B5173DB0-YK0 4GB
Apacer Technology GD2.1527WE.001 8GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M471A1K43EB1-CWE 8GB
A-DATA Technology AD4S320038G22-B 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A4G43MB1-CTD 32GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905622-025.A00G 4GB
Samsung M378T5663QZ3-CF7 2GB
Kingston KY7N41-MID 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Heoriady M378A1K43BB2-CTD 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
报告一个错误
×
Bug description
Source link