RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
1901
RAM
Samsung WD2RE04GX818V-800 4GB
Latency
69
Read speed
3,740.4
Write speed
2,345.8
№
1902
RAM
Kingston 99U5315-010.A00LF 512MB
Latency
69
Read speed
2,680.0
Write speed
1,243.6
№
1903
RAM
OCZ OCZ2RPR8002GK 1GB
Latency
69
Read speed
3,409.1
Write speed
1,732.1
№
1904
RAM
Ramaxel Technology RMN1150EF48D7W-800 1GB
Latency
69
Read speed
4,184.6
Write speed
1,715.5
№
1905
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512S64BP8-C4 1GB
Latency
69
Read speed
2,699.8
Write speed
1,192.9
№
1906
RAM
Kreton Corporation 51624522368C353200 2GB
Latency
69
Read speed
2,337.6
Write speed
835.0
№
1907
RAM
ASint Technology B2YJUSG4FN1 2GB
Latency
69
Read speed
3,808.9
Write speed
2,017.2
№
1908
RAM
Kingston 99U5429-003.A00LF 1GB
Latency
69
Read speed
3,886.4
Write speed
2,080.1
№
1909
RAM
TwinMOS 8DQT5MK8-TATP 2GB
Latency
69
Read speed
5,414.9
Write speed
3,423.5
№
1910
RAM
Elpida EBE11UD8AJWA-8G-E 1GB
Latency
69
Read speed
3,165.3
Write speed
1,757.0
№
1911
RAM
ASint Technology SLZ2128M8-JGE1F 2GB
Latency
69
Read speed
5,097.9
Write speed
3,399.7
№
1912
RAM
Elpida EBE20UF8ABKA-8G-E 2GB
Latency
69
Read speed
4,213.3
Write speed
2,345.8
№
1913
RAM
Samsung M3 78T2863QZS-CF7 1GB
Latency
69
Read speed
4,217.2
Write speed
1,857.7
№
1914
RAM
Kingston 9905295-031.B00LF 1GB
Latency
69
Read speed
1,953.9
Write speed
878.1
№
1915
RAM
Centon Electronics JIYT38UXC 1GB 1GB
Latency
69
Read speed
3,258.1
Write speed
2,167.8
№
1916
RAM
Samsung M3 78T6464QZ3-CF7 512MB
Latency
69
Read speed
2,720.1
Write speed
1,631.6
№
1917
RAM
A-DATA Technology DOPE1B163B2 2GB
Latency
69
Read speed
2,678.0
Write speed
1,130.5
№
1918
RAM
Smart Modular SG564288FG8N6IL-Z1 1GB
Latency
69
Read speed
3,650.1
Write speed
1,343.7
№
1919
RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Latency
70
Read speed
4,372.7
Write speed
3,071.4
№
1920
RAM
Corsair VS1GB667D2 1GB
Latency
70
Read speed
3,932.8
Write speed
1,627.8
«
93
94
95
96
97
98
»
最新比较
AMD R538G1601U2S-UO 8GB
Kingston 9905624-014.A00G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965639-002.A01G 8GB
Kingston 9965669-018.A00G 16GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 99U5743-031.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C19-16GSXF 16GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3200C16-32GVK 32GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 99U5624-003.A00G 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung T471A1K43CB1-CRC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965604-033.D00G 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905622-051.A00G 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CT16G4SFD8266 16GB
A-DATA Technology DDR4 2666 8GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
