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A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M378A1G44AB0-CWE 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Overall score
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Differences Specifications Comments

Differences

A-DATA Technology AM2U16BC4P2-B05B 4GB Reasons to consider
A-DATA Technology AM2U16BC4P2-B05B 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 38
    Around 32% lower latency
Samsung M378A1G44AB0-CWE 8GB Reasons to consider
Samsung M378A1G44AB0-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    16.5 left arrow 14
    Average value in the tests
  • Faster write speed, GB/s
    10.9 left arrow 9.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M378A1G44AB0-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 38
  • Read speed, GB/s
    14.0 left arrow 16.5
  • Write speed, GB/s
    9.1 left arrow 10.9
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2330 left arrow 2829

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM comparisons

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M378A1G44AB0-CWE 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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