RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DDR4 2400 16GB
Corsair CMSX4GX4M1A2400C16 4GB
Compare
A-DATA Technology DDR4 2400 16GB vs Corsair CMSX4GX4M1A2400C16 4GB
Overall score
A-DATA Technology DDR4 2400 16GB
Overall score
Corsair CMSX4GX4M1A2400C16 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DDR4 2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
139
Around 78% lower latency
Faster reading speed, GB/s
16.8
14.4
Average value in the tests
Faster write speed, GB/s
11.5
6.9
Average value in the tests
Reasons to consider
Corsair CMSX4GX4M1A2400C16 4GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DDR4 2400 16GB
Corsair CMSX4GX4M1A2400C16 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
30
139
Read speed, GB/s
16.8
14.4
Write speed, GB/s
11.5
6.9
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3019
1152
A-DATA Technology DDR4 2400 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMSX4GX4M1A2400C16 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2666C15-16GVK 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
V-GEN D4R8GL24A8R 8GB
A-DATA Technology DOVF1B163G2G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology DDR4 2400 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avant Technology J641GU42J9266ND 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Gloway International (HK) STK4U2400D17161C 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
DSL Memory D4SS1G081SH24A-A 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C16-8GVRB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-2133C15-8GIS 8GB
Samsung M471B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Report a bug
×
Bug description
Source link