RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C18-16GTZR 16GB
Compare
A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3600C18-16GTZR 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
G Skill Intl F4-3600C18-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
18.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C18-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
66
Around -128% lower latency
Faster write speed, GB/s
15.6
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C18-16GTZR 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
29
Read speed, GB/s
2,775.5
18.5
Write speed, GB/s
1,557.9
15.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
3722
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
G Skill Intl F4-3600C18-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Qimonda 64T128020EDL2.5C2 1GB
Apacer Technology GD2.1827CS.003 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Samsung M378A1K43EB2-CWE 8GB
Teikon TMA851U6CJR6N-VKSC 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Apacer Technology GD2.22428S.001 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C16-16GSXKB 16GB
Crucial Technology CT51264BA160BJ.8F1 4GB
Crucial Technology CT51264BA160BJ.M8F 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Corsair CMX8GX3M4A1333C9 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Samsung M471B5674QH0-YK0 2GB
Avant Technology J641GU42J5213N0 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2400C16-8GFX 8GB
Corsair CMD8GX3M2A2933C12 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Report a bug
×
Bug description
Source link