RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C18-8GTZ 8GB
Compare
A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-4000C18-8GTZ 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
G Skill Intl F4-4000C18-8GTZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
19.1
Average value in the tests
Reasons to consider
G Skill Intl F4-4000C18-8GTZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
66
Around -164% lower latency
Faster write speed, GB/s
16.7
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C18-8GTZ 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
25
Read speed, GB/s
2,775.5
19.1
Write speed, GB/s
1,557.9
16.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
3845
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
G Skill Intl F4-4000C18-8GTZ 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston 99U5428-101.A00LF 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Kingston K531R8-MIN 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Samsung M393B1K70CH0-CH9 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston HP32D4S2S1ME-4 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD16GX4M4B3000C15 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A2K43CB1-CTD 16GB
Kingston 99U5474-028.A00LF 4GB
Corsair CM4X8GF2400C16K4 8GB
Samsung M471B5173EB0-YK0 4GB
Corsair CMD16GX4M4B3333C16 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C14-16GTZR 16GB
Kingston KVR16N11/8-SP 8GB
Mushkin MRX4U300GJJM16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Report a bug
×
Bug description
Source link